технические характеристики

• LNA/Power Amp Type: Low Noise Amplifier
• Frequency Response min: 1.575 GHz
• Frequency Response max: 1.61 GHz
• Noise Figure typ: 0.65 dB
• OIP3 typ: 16 dBm
• Gain typ: 19.5 dB
• Temperature Range: -40 to 85°C
• Package: Wafer-Level Package 3x2 Bump, Full Array, EVKIT
• Package Area: 1.3289mm² (Wafer-Level Package 3x2 Bump, Full Array) (MAX2667EWT+)
• Package Height: 0.69mm (Wafer-Level Package 3x2 Bump, Full Array) (MAX2667EWT+)
• Lifecycle: Production

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