технические характеристики

• Number of Amps: 1
• Voltage Supply Span min: 1.8 V
• Voltage Supply Span max: 5.5 V
• Gain Bandwidth Product typ: 9 kHz
• Supply Current per Amplifier max: 1.2 µA
• Temperature Range: -40 to 85°C
• Package: Wafer-Level Package 3x2 Bump, Full Array
• Package Area: 1.3289mm² (Wafer-Level Package 3x2 Bump, Full Array) (MAX44264EWT+)
• Package Height: 0.69mm (Wafer-Level Package 3x2 Bump, Full Array) (MAX44264EWT+)
• Lifecycle: Production

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