технические характеристики

• Configuration: 1:1 SPST
• Number of Channels: 4
• Switch RON typ: 115 Ω
• Switch ON Leakage typ: 100 pA
• Charge Injection typ: 20 pC
• Channel On Capacitance typ: 16 pF
• Single Supply Voltage Span min: 4.5 V
• Dual Supply Voltage Span min: 4.5 V
• Dual Supply Voltage Span max: 18 V
• Package: SOIC_N, Ceramic Dual-In-Line, Narrow (0.3in), Plastic Dual-In-Line, Narrow (0.3in)
• Package Area: 62mm² (SOIC_N) (DG202CSE+)
• Package Height: 1.75mm (SOIC_N) (DG202CSE+)
• Lifecycle: Production

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