технические характеристики

• Configuration: 1:1 SPST
• Number of Channels: 4
• Switch RON typ: 50 Ω
• RON Flatness max: 9 Ω
• Switch ON Leakage typ: 80 pA
• Charge Injection typ: 10 pC
• Channel On Capacitance typ: 16 pF
• Single Supply Voltage Span min: 10 V
• Single Supply Voltage Span max: 30 V
• Dual Supply Voltage Span min: 4.5 V
• Dual Supply Voltage Span max: 20 V
• Package: LFCSP, SOIC_N, Leadless Chip Carrier, Ceramic Dual-In-Line, Narrow (0.3in)
• Package Area: 26.01mm² (LFCSP) (DG442ETE+)
• Package Height: 0.8mm (LFCSP) (DG442ETE+)
• Lifecycle: Production

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