технические характеристики

• Configuration: 3:1
• Number of Channels: 2
• Switch RON typ: 0.38 Ω
• RON Flatness max: 0.35 Ω
• Switch ON Leakage typ: 100 nA
• Charge Injection typ: 300 pC
• Channel On Capacitance typ: 450 pF
• Single Supply Voltage Span min: 1.8 V
• Single Supply Voltage Span max: 5.5 V
• Package: Thin Dual Flatpack No Leads, Wafer-Level Package 3x4 Bump, Full Array
• Package Area: 3.3488mm² (Wafer-Level Package 3x4 Bump, Full Array) (MAX4932EWC+)
• Package Height: 0.69mm (Wafer-Level Package 3x4 Bump, Full Array) (MAX4932EWC+)
• Lifecycle: Production

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