технические характеристики

• Configuration: 2:1 SPDT
• Number of Channels: 2
• Switch RON typ: 0.36 Ω
• RON Flatness max: 1 Ω
• Switch ON Leakage typ: 100 nA
• Bandwidth -3 dB: 80 MHz
• Channel On Capacitance typ: 125 pF
• Single Supply Voltage Span min: 2.3 V
• Single Supply Voltage Span max: 5.5 V
• Package: Wafer-Level Package 3x4 Bump, Full Array, EVKIT
• Package Area: 3.3488mm² (Wafer-Level Package 3x4 Bump, Full Array) (MAX14504EWC+)
• Package Height: 0.69mm (Wafer-Level Package 3x4 Bump, Full Array) (MAX14504EWC+)
• Lifecycle: Recommended For New Designs

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