технические характеристики

• Configuration: DPDT
• Number of Channels: 2
• Switch RON typ: 0.2 Ω
• RON Flatness max: 10 Ω
• Switch ON Leakage typ: 400 nA
• Bandwidth -3 dB: 200 MHz
• Channel On Capacitance typ: 50 pF
• Single Supply Voltage Span min: 1.6 V
• Single Supply Voltage Span max: 5.5 V
• Package: EVKIT, Wafer-Level Package 3x3 Bump, Full Array
• Package Area: 1.69mm² (Wafer-Level Package 3x3 Bump, Full Array) (MAX14594EEWL+)
• Package Height: 0.69mm (Wafer-Level Package 3x3 Bump, Full Array) (MAX14594EEWL+)
• Lifecycle: Production

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